The preparation and application of sputtering target
According to its composition, the target can be divided into pure metal, alloy and compound target, which is used in microelectronics, magnetic recording, CDs, precious metals, film resistance, surface modification, light layer, decorative layer and so on. Japan and Germany are the leading country in the world, according to statistics from 1990 to 1998, the number that the countries all over the world applied for the target patent in the United States is large, Japan accounted for 58%, the United States accounted for 27% and Germany accounted for11%. It also proved once again that in the research, development and production of target, Japan occupies the leading position in the world, at the same time, the most number of people engaged in the sputtering targets.
In order to improve the efficiency and ensure the quality of the deposition of thin films, there is a higher requirement on the properties of sputtering target. In recent years, with the rapid development of the microelectronics industry, the wafer size rapidly developed by 6, 8 to 12, the wiring width decreased by 0.5Λm to 0.25Λm, 0.18Λm even 0.13Λm，in the past, 99.995% (4 N5) target purity can meet the requirements of the process of 0.35ΛmIC, now if you want to make 0.18Λm of target, its purity is required in 99.999% (5N) even above 99.999% (6N). Due to alkali metal ions (Na +, K +) are easy to be turned into mobile ions in the insulating layer to reduce device performance, uranium (U) and titanium (TI) etc. elements will release alpha rays. So the target manufacturer must to indicate its species and quantity of impurity.
Due to the higher requirements for its purity of various sputtering target used in the information industry, therefore, in the manufacturing process, the cost of smelting and heat treatment is high, which leads to the more expensive target. But because of the sputtering equipment, the utilization rate of target material is not high, only about 30% in the past. In recent years, although the equipment has improved, target utilization is only about 50%, how to further improve the target utilization rate is the common research subject of target manufacturing factory and sputtering equipment manufacturing plant.
In order to improve the efficiency and ensure the quality of the deposition of thin films, there is a higher requirement on the properties of sputtering target. In recent years, with the rapid development of the microelectronics industry, the wafer size rapidly developed by 6, 8 to 12, the wiring width decreased by 0.5Λm to 0.25Λm, 0.18Λm even 0.13Λm，in the past, 99.995% (4 N5) target purity can meet the requirements of the process of 0.35ΛmIC, now if you want to make 0.18Λm of target, its purity is required in 99.999% (5N) even above 99.999% (6N). Due to alkali metal ions (Na +, K +) are easy to be turned into mobile ions in the insulating layer to reduce device performance, uranium (U) and titanium (TI) etc. elements will release alpha rays. So the target manufacturer must to indicate its species and quantity of impurity.
Due to the higher requirements for its purity of various sputtering target used in the information industry, therefore, in the manufacturing process, the cost of smelting and heat treatment is high, which leads to the more expensive target. But because of the sputtering equipment, the utilization rate of target material is not high, only about 30% in the past. In recent years, although the equipment has improved, target utilization is only about 50%, how to further improve the target utilization rate is the common research subject of target manufacturing factory and sputtering equipment manufacturing plant.
